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| SMD Type MOS Fied Effect Transistor 2SJ203 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Possible to reduce the number of parts by omitting the bias resisor. 0.55 Not necessary to consider driving current thanks to hight input impedance. +0.1 1.3-0.1 Directly driven by Ics having a 3V poer supply. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -16 7 200 400 200 -55 to 80 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-16V,VGS=0 VGS= 3V,VDS=0 A -1.0 20 -1.6 48 15 7 28 VDS=-3.0V,VGS=0,f=1MHZ 32 6 180 VGS(on)=-3V,RG=10 10mA RL=300 ,VDD=-3.0V,ID=420 100 200 23 10 pF pF pF ns ns ns ns Min Typ Max -10 10 -2.2 Unit A A V ms VGS(off) VDS=-3V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-3V,ID=-10mA VGS=-2.5V,ID=-1mA VGS=-4.0V,ID=-1mA Marking Marking H14 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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